PART |
Description |
Maker |
STP80N03L-06 4881 |
N-Channel Enhancement Mode "Ultra High Density" Power MOS Transistor(N沟道增强模式高密度功率MOS晶体管) N沟道增强模式“超高密度”功率MOS晶体管(不适用沟道增强模式高密度功率马鞍山晶体管) N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR From old datasheet system N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
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STMicroelectronics N.V. ST Microelectronics STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
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STW80N06-10 4868 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR From old datasheet system N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
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ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
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STP40N03L-20 4886 |
From old datasheet system N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY POWER MOS TRANSISTOR
|
ST Microelectronics STMicroelectronics
|
STP80N06-1 STP80N06-10 4888 |
From old datasheet system N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
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ST Microelectronics STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
|
HSU88 |
Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly
|
TY Semiconductor Co., Ltd
|
TSM3400CXRF |
High Density Cell Design for Ultra Low On-resistance
|
TY Semiconductor Co., Ltd
|
ME2302A29T |
High-density cell design for ultra low on-resistance
|
SUNMATE electronic Co.,...
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SCFS12000 SCFS10000 SCFS2000 SCFS4000 SCFS6000 SCF |
1.5 A, 4000 V, SILICON, RECTIFIER DIODE FAST RECOVERY HIGH VOLTAGE RECTIFIER ASSEMBLY High Voltage,High Density Fast Recovery Rectifier(反向电压4000V,温55℃时平均整流电流1.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(反向电压6000V,温5℃时平均整流电流1.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(反向电压12000V,温5℃时平均整流电流1.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(反向电压2000V,温5℃时平均整流电流1.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(反向电压10000V,温5℃时平均整流电流1.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(????靛?12000V锛?俯搴?5???骞冲??存??垫?1.5A,楂??锛??瀵?害锛?揩???澶??娴??)
|
Semtech Corporation
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ISPLSI2096VE-100LT128 ISPLSI2096VE-135LT128 ISPLSI |
3.3V In-System Programmable SuperFAST?/a> High Density PLD CRYSTAL 24.0 MHZ 20PF SMD 3.3V In-System Programmable SuperFASTHigh Density PLD 3.3V In-System Programmable SuperFAST High Density PLD 3.3V In-System Programmable SuperFAST⑩ High Density PLD 3.3VIn-SystemProgrammableSuperFASTHighDensityPLD
|
Lattice Semiconductor Corporation LATTICE[Lattice Semiconductor]
|
RPM973-H16 |
Ultra-compact, Ultra-thin Top View FIR-compatible IrDA Module with Built-in Remote Control Transmission Function
|
Rohm
|
CX-53F CX-53F-12.0000MHZ-STBY2-TOL2-CL CX-53F-24.5 |
QUARTZ CRYSTAL RESONATOR, 24.54545 MHz QUARTZ CRYSTAL RESONATOR, 12 MHz Ultra-thin, thickness 1.1mm or less. 超薄,厚.1mm的或更少 Ultra-thin/ thickness 1.1mm or less. SMD
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Kyocera, Corp. KSS[Kyocera Kinseki Corpotation] American KSS
|
V35PWM10 |
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.41 V at IF = 5 A
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Vishay Siliconix
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